11:30 - 12:45
Parallel sessions
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11:30 - 12:45
Thin films and epitaxial growth-03, SG-T-1
Room: {session_room}
Chair/s:
Bharat Jalan
11:30 - 12:00
Invited talk-01
Epitaxial p-type Copper Iodide Thin Films with controlled Carrier Concentration grown by Pulsed Laser Deposition
Michael Lorenz, University Leipzig, Felix Bloch Institute for Solid State Physics, Semiconductor Physics Group, Leipzig, Germany
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12:00 - 12:15
Oral presentation-02
Evaluation of crystal quality of 3C-SiC layers grown on vicinal carbon-face 4H-SiC substrates with various off-orientations and off-angles
Hiroyuki Sazawa, National Institute of Advanced Industrial Science and Technology Advanced Power Electronics Research Center
{x_abstract}
12:15 - 12:30
Oral presentation-03
Grown C onsidering L attice M ismatch and C rystal Q uality and M agneto- O ptical P roperties of Bi smuth and M anganese co-doped Rare Earth Iron Garnet Crystal
Anhua Wu, ey Laboratory of Transparent Optical Functional Inorganic Materials, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201899, China | Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
{x_abstract}
12:30 - 12:45
Oral presentation-04
Surprising Surfactant Properties of Zn in MOVPE Grown III-V Materials
Ayse Ozcan Atar, Tyndall National Institute
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