11:30 - 12:45
Room: SG-T-1
Chair/s:
Bharat Jalan
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Evaluation of crystal quality of 3C-SiC layers grown on vicinal carbon-face 4H-SiC substrates with various off-orientations and off-angles
Oral presentation-02
Presented by: Hiroyuki Sazawa
Hiroyuki Sazawa
National Institute of Advanced Industrial Science and Technology Advanced Power Electronics Research Center
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