11:30 - 12:45
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11:30 - 12:45
Semiconductors-02, SG-I-1
Room: {session_room}
Chair/s:
Siddha Pimputkar
11:30 - 12:00
Invited talk-01
Detailed study of HVPE-GaN doped with silicon
Mikolaj Amilusik, Institute of High Pressure Physics Polish Academy of Sciences
{x_abstract}
12:00 - 12:15
Oral presentation-02
High electron density of Sn-doped GaN layer by halide vapor phase epitaxy
Kansuke Hamasaki, Department of Electronics, Nagoya University, et al.
{x_abstract}
12:15 - 12:30
Oral presentation-03
Characteristics of high order silane-based Si and SiGe epitaxial growth under 600℃
Dongmin Yoon, Yonsei University, Seoul, Repulic of Korea
{x_abstract}
12:30 - 12:45
Oral presentation-04
Suppression of Inclusions in GaN Crystals Formed During Na-Flux Growth Through the Flux-Film-Coated Technique
Masayuki Imanishi, Graduate School of Engineering, Osaka University
{x_abstract}