11:30 - 12:45
Room: SG-I-1
Chair/s:
Siddha Pimputkar
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Characteristics of high order silane-based Si and SiGe epitaxial growth under 600℃
Oral presentation-03
Presented by: Dongmin Yoon
Dongmin Yoon
Yonsei University, Seoul, Repulic of Korea
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