09:45 - 11:00
Parallel sessions
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09:45 - 11:00
Modelling and artificial intelligence of crystal growth processes-03, SG-T-1
Room: {session_room}
Chair/s:
Natasha Dropka, Toru Ujihara
09:45 - 10:15
Invited talk-01
Fast prediction of transport structures in bulk single crystal growth by Physics Informed Neural Networks
Yasunori Okano, Osaka University
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10:15 - 10:30
Oral presentation-02
Effect of crystal and crucible rotation on the thermal and oxygen instabilities in a Czochralski process for solar silicon growth
Daniel Vizman, West University of Timisoara
{x_abstract}
10:30 - 10:45
Oral presentation-03
Optimization of the thermal field of 8-inch SiC crystal growth by PVT method with “3 separation heater method”
Binjie Xu, State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China | Zhejiang Provincial Key Laboratory of Power Semiconductor Materials and Devices, ZJU-Hangzhou Global Scientific and Technological Innovation Center, Hangzhou 311215, China
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10:45 - 11:00
Oral presentation-04
Investigation of the turbulent silicon melt flow in a model geometry under a horizontal magnetic field
Andrey Smirnov, Semiconductor Technology Research d.o.o. Beograd
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