The Effect of a Nucleation Layer on Morphology and Grain Size in MOCVD-Grown β-Ga 2 O 3 Thin Films on C-Plane Sapphire

The Effect of a Nucleation Layer on Morphology and Grain Size in MOCVD-Grown β-Ga₂O₃ Thin Films on C-Plane Sapphire

Poster presentation-40

Presented by: Edgars Butanovs

Edgars Butanovs

Institute of Solid State Physics, University of Latvia