IMF2017

Ferroelectric polymers are well-suited candidates for low-cost, flexible non-volatile memory applications. The ferroelectric polarization is employed to store information in binary form. The basic memory element is a polymeric ferroelectric capacitor. The readout operation of the ferroelectric capacitors however is destructive, which complicates its integration in large arrays. The challenge of non-destructive read-out was overcome by blending semiconducting and ferroelectric polymers that yields phase-separated networks. Excellent bistable current rectification with high on/off current ratios has been demonstrated. The combination of ferroelectric bistability with (semi)conductivity and rectification allowed for demonstration of a 1 kbit solution-processable non-volatile reconfigurable memory arrays on foil with a simple cross-bar architecture that can be read out non-destructively. There is however still a limited understanding of the device physics, which is required for the technological implementation of high-density arrays. In this contribution, bistable ferroelectric diodes are fabricated by using both phase separation method, and the soft lithography method by solution micromolding. We have developed a morphology relevant device model and elucidate on the operation mechanism of the ferroelectric diode and show that the operation is based on the modulation of the injection barrier. Since the dependence of polarization on electric field is explicitly taken into account, the current-voltage characteristics of the diodes can be quantitatively described. The model provides design rules for the implementation of organic ferroelectric memory diodes, and predicts an ultimate theoretical memory density in the order of Tbit/cm² for a polymeric ferroelectric diode arrays.