0.65PMN-0.35PT thin films exhibits excellent ferroelectric and piezoelectric properties, which make it suitable for various device applications like sensors, actuators, energy harvesting etc. Although large number of research reports were available on PMN-PT, the unparallel electric properties and smartness of this material could not be explored and utilised completely, till date. Synthesizing good quality and single phase PMN-PT ceramic target and stoichiometric transfer of the material during thin film growth were reported as two prominent reasons. Lead evaporation and pyrochlore formation during thin film growth are two challenges, which repel the researchers from utilizing this excellent and smart material. Deposition window for PMN-PT thin film is very narrow and the phase formation and quality of the film depend on various factors like nature and quality of the substrate and target, buffer layer used, substrate temperature during deposition, energy fluence, laser frequency, throw distance, oxygen partial pressure during deposition, annealing time etc, which make the realization of PMN-PT thin film/optimization of the deposition parameters, a cumbersome process. We will present a systematic study of these various factors to realize high quality PMN-PT thin film using pulsed laser deposition. La0.5Sr0.5CoO3 (LSCO) buffer layer was deposited on commercial platinised silicon substrate, prior to the deposition of PMN-PT thin films. XRD, Raman, SEM, AFM and XPS analysis were carried out on selected films to establish the phase formation and the quality of the films. Ferroelectric studies of the films attest the suitability of the deposited films for device fabrication and/or applications.