IMF2017

Ferroelectric polarization related charge transport have been utilized for novel electronic devices, such as ferroelectric tunnel junction, switchable diode, and ferroelectric memristor. Recently, ferroelectric-based oxide heterostructure has been proposed for synapse device that exhibits a high on/off ratio, low power consumption and short process time. In ferroelectric-based synapse devices, gradual electroresistive modulation is associated with change of ferroelectric domain configuration, providing the controllability of the electric conductance for the effective operation of synapse devices. In this work, we fabricated a ferroelectric-field-effect transistor based synapse devices with channel layer of metal to semiconducting transition (MST) oxide. Ferroelectric polarization reversal can control the amount of applied energy to MST oxide phase transition and channel conductance at the same time. Our ferroelectric heterostructure with analog-like electroresistive modulation is highly desirable for realizing a new synapse device.