Ferroelectric materials have been progressively used in non-volatile memory applications. Multifunctional properties of ferroelectric and multiferroic complex oxides permit researchers to develop new approaches in the field of memory storage and optical devices. Both doped and undoped HfO2 have attracted much attention from the viewpoints of ferroelectricity due to its CMOS compatibility. We found the ferroelectric behavior in HfO2 thin film grown by plasma enhanced Atomic Layer Deposition (ALD). The ultra thick ~ 20 nm films showed a remnant polarization ~10 μC/cm2. Further studies of the film that confirmed ferroelectric nature by observing phase hysteresis and butterfly amplitude loops through Piezoresponse Force Microscopy (PFM) techniques. The novel achievement can be used for future potential applications such as non-volatile FeRAM. Further characteristic of the film will be shown during presentation.