14:45 - 16:25
Room: Room4
Oral presentation
Chair/s:
Brahim Dkhil
(INVITED) Enhancement of bulk photovoltaic effect in BiFeO3 thin films by Mn doping
Seiji Nakashima, Kota Takayama, Hironoori Fujisawa, Masaru Shimizu
University of Hyogo, Himeji, Japan

Recently, photovoltaic effect in ferroelerctrics have been attracted much attention because of its high voltage generation. We have investigated bulk photovoltaic effect in single-domain BiFeO3 (BFO) thin films, and have reported that Pt/single-domain BFO/Pt coplanar capacitor with a interelectrodes distance of 260 μm shows open circuit voltage (VOC) of 41 V under a blue-violet laser (λ= 405 nm) illumination. In this study, enhancement of bulk photovoltaic effect in single-domain BFO thin films by Mn doping was investigated. 1-μm-thick Mn-doped BFO (BFMO) thin films with various Mn-doping amount of 0 – 10 at% were grown by RF magnetron sputtering. Vicinal SrTiO3 (STO) (001) with vicinal direction and angle of <110> and 4o, respectively, was used as a substrate for growing single-domain BFMO thin films. Pt electrodes were deposited on BFMO thin films, and Pt/BFMO/Pt coplanar capacitors with interelectrodes distance of 260 μm were prepared. I-V characteristics of the Pt/BFMO/Pt coplanar capacitors were measured under blue-violet laser illumination. Maximum VOC of 287 V was found in Pt/1-at%-doped BFO/Pt coplanar capacitor at RT. This value corresponds to electric field of 11 kV/cm.


Reference:
We-S54-O-06
Presenter/s:
Seiji Nakashima
Presentation type:
Oral communication
Room:
Room4
Chair/s:
Brahim Dkhil
Date:
Wednesday, September 6th, 2017
Time:
16:00 - 16:20
Session times:
14:45 - 16:25