Strain and switching behavior in doped BZCT system

Zhen Liu ^{1, 3}, Ruihao Yuan ², Dezhen Xue ², Wenwu Cao ^{1, 4}, Turab Lookman ³

¹ Condensed Matter Science and Technology Institute and Department of Physics, School of Science, Harbin Institute of Technology, Harbin 150080, China, Harbin, China
² State Key Laboratory for Mechanical Behavior of Materials,Xi'an Jiaotong University, Xi'an 710049, China, Xi'an, China
³ Theoretical Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA, Los Alamos, United States
⁴ Materials Research Institute and Department of Mathematics, The Pennsylvania State University, University Park, Pennsylvania 16802, USA, University Park, United States

The lead-free Ba(Zr_0.2Ti_0.8)O₃-x(Ba_0.7Ca_0.3)TiO₃ (BZT-xBCT) solution has been reported to show excellent piezoelectric performance comparable to that of soft PZT at room temperature (e.g., d₃₃= 580~620 pC/N for BZT-50BCT at room temperature). For the BZT-xBCT system, the piezoelectric properties can be further optimized by ion doping. In this work, we consider variants of this system by including additional dopants and develop parameterized phase field simulations to study domain evolution. We investigate switching with increasing field to study factors leading to large piezoelectric enhancement. Our simulation results indicate that the domain rotation behavior can be greatly influence by dopants. Small changes of the elastic constants due to ion doping can lead to about 50% enhancement of the piezoelectric property.

Reference:

We-S52-O-04

Presenter/s:

Zhen Liu

Presentation type:

Oral communication

Room:

Room2

Chair/s:

Alex Demkov

Date:

Wednesday, September 6th, 2017

Time:

15:30 - 15:45

Session times:

14:45 - 16:25

IMF2017