IMF2017

Recently, the deleterious environmental impact of the lead used in many ferroelectric and piezoelectric materials has stimulated research into lead-free alternatives with comparable properties. Bismuth titanate-based materials are considered to be candidates for use as lead-free piezoelectrics. We investigated the Bi_3.15Nd_0.85Ti₃O₁₂ (BNdT) thin film fabricated by Pulsed Laser Deposition (PLD), which is a relatively easy method for fabrication of thin films. The samples were grown on Pt/Ti/SiO­₂/Si substrates using a KrF laser (248 nm). To find an optimal condition of this sample, we varied the PLD deposition conditions, including the substrate temperature, oxygen gas pressure, repetition frequency, target-substrate distance and pulse energy density. The BNdT thin films were measured by X-ray diffraction (XRD), Field effect-scanning electron microscope (FE-SEM), T-F analyzer, and Sawyer-Tower Circuit for structural and electrical properties. As the films deposited at different temperature up to 750 ℃ in our system, the main peak (117) is highest at 700 ℃. Also, that peak is suddenly increased from 600 ℃. we found (004) and (006) peaks rose from 650 ℃. Especially, the second phase is disappeared from 600 ℃. So we thought the deposition temperature is the most important parameter of BNdT thin films. Unfortunately, we couldn’t measure the electrical properties yet. We think because of the effect of Bismuth’s volatile property so that we will overcome that problem using the Bi excess in extra experiments.