Ferroelectric materials exhibit spontaneous inversion symmetry breaking and polarization that can be exploited for excited carrier separation in photovoltaic devices. The wide band gaps of traditional ferroelectric oxide materials limit their utility for use in photovoltaic and optoelectronic devices, motivating the search for ferroelectric oxide semiconductors with band gaps in the visible range. We use density functional calculations for a variety of ferroelectric oxide solid solutions to examine the effects of compositional and local structure changes on the electronic structure of these materials. We find that W- and Mo-containing solid solutions exhibit high absorption coefficients and visible-range band gaps, making these materials promising for use as solar absorbers in photovoltaic devices.