IMF2017

Zirconolite Bi₂(Zn_1/3Nb_2/3)₂O₇ multi-layer thin films were fabricated on high resistivity (HR)-Si substrates by sol-gel method. The thin films were synthesized either by conventional sintering at 700 oC for 1 hour or by microwave sintering at 2400W for short time. The microwave dielectric properties of Bi₂(Zn_1/3Nb_2/3)₂O₇ thin films were measured using the cavity perturbation technique. Experimental results showed that the BZN film synthesized by microwave sintering has a lower dielectric loss than the one synthesized by conventional sintering. With the increasing microwave sintering time, the dielectric loss of BZN thin films decreased from 0.04 to 0.005 while the permittivity remained stable. The temperature dependence of microwave dielectric permittivity and dielectric loss of BZN thin films by conventional sintering and microwave sintering was also investigate. High permittivity, low dielectric loss make the Bi₂(Zn_1/3Nb_2/3)₂O₇ thin films are competitive candidates for the applications of microwave device.