IMF2017

Polycrystalline Ga_“0.5” Al_“0.5” Fe_“1-x” Mn_“x”O_“3” (x=0.0, 0.025, 0.05) samples were synthesized using metal nitrates by sol-gel technique. Rietveld refinement of X-Ray diffraction data shows the presence of orthorhombic structured phase with space group Pc2_“1” n without any secondary phase in all the samples. Reduction in the lattice constant and unit cell volume is observed upon the doping of Al and Mn in GaFeO_“3” (GFO) samples. Room temperature ferroelectric measurements showed the improvement in ferroelectric hysteresis loops with the incorporation of Al and Mn doping in GaFeO_“3” and this is attributed to the increase of orthorhombic distortion with increase in doping content and due to changes in the defect chemistry. Consequently, the leakage current is also reduced by three orders of magnitude as compared to pure GFO. However, there is a decrease in magnetization values and Curie temperature (T_“c”) as compared with pure GaFeO_“3”.