IMF2017

Recent advances towards Electro-optic (EO) modulators make use of the Pockels effect in non-centrosymmetric crystals which allows the preferential selection of polarization. The large value of electro-optic (EO) coefficient of Strontium barium niobate has gained advances in field of electro optic devices by various researchers. Various deposition techniques have been utilized for depositing SBN thin films which includes Pulsed laser deposition (PLD) technique, Sol-gel and Metal organic chemical vapor deposition (MOCVD). In order to investigate the birefringence property, SBN60 thin films were deposited using PLD technique under optimized parameters. The field-induced birefringence was measured in the transverse geometry for 800 nm thin SBN film deposited on the fused silica substrate. The dc electric field was applied on Aluminum parallel electrodes deposited on the surface of SBN thin film. A small birefringence was induced in the as-deposited film by the alignment of the incident laser along c-axis in the film plane. The birefringence in the SBN60 thin film was enhanced by application of a dc electric field (up to 10 kV). The small phase shift, , of the (between s and p polarized) reflected light was then determined from the difference of the light levels at the two balanced detectors monitored using lock in amplifier. The values of were obtained from , where is the wavelength of incident laser light (633 nm), d is the total optical path length across the film. The value of was found to be in accordance to the reported values.