Now-a-days, there is a rapid development of high-low dielectric constant materials for microelectronics industry. More emphasis is given on reduction of volumetric size of the material for electronic devices such as capacitors, filters, resonators and memory devices by using the high dielectric constant materials. Although the high permittivity materials are helpful for diminishing the size of the components in microelectronic systems, their applications are still very limited due to many inherent problems of the materials including high dielectric losses. Several attempts have been made to solve the problems. In this attempt, we have carried out extensive studies on capacitive and resistive characteristics of BaCu₃Ti₄O₁₂ (family member of giant dielectric constant material CaCu₃Ti₄O₁₂). In this presentation we report crystal structure, dielectric, impedance spectroscopy of chemically prepared sample. X-ray diffraction study exhibits the formation of single-phase compound at 900 ^oC. Dielectric and impedance spectroscopy study of this ceramic compound has been characterized in a wide frequency (1 kHz-1 MHz) and temperature (25 ^oC-500 ^oC) ranges. In the impedance analysis, Nyquist plots discuss the presence and contributions of grain, grain boundary and electrode effect. The bulk resistance of the material decreases with increasing temperature showing negative temperature showing a typical semiconducting property, i.e. negative temperature coefficient of resistance (NTCR) behavior.