09:45 - 11:00
Parallel sessions
‹
Back
09:45 - 11:00
Semiconductors-05, SG-I-1
Room: {session_room}
Chair/s:
Mark Goorsky
09:45 - 10:15
Invited talk-01
Comparative Etching Study of Dislocations in Bulk GaN grown by HVPE, Na-Flux and Ammonothermal method
Bhavpreeta Pratap Charan, Graduate School of Engineering, Osaka University
{x_abstract}
10:15 - 10:30
Oral presentation-02
β-Ga2O3 thin films grown by Pulsed Electron Deposition
Stefano Rampino, IMEM-CNR | University of Parma, et al.
{x_abstract}
10:30 - 10:45
Oral presentation-03
Macrostep flow behavior in 4H-SiC solution growth with different solvent compositions and surface orientations
Takeshi Mitani, National Institute of Advanced Industrial Science and Technology
{x_abstract}
10:45 - 11:00
Oral presentation-04
Understanding Transport and Kinetic Effects during High-Pressure, High-Temperature (HPHT) Growth of Single-Crystal Diamond
Jeffrey Derby, University of Minnesota, et al.
{x_abstract}