11:30 - 12:45
Parallel sessions
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11:30 - 12:45
Semiconductors-04, SG-I-1
Room: {session_room}
Chair/s:
Roberto Fornari
11:30 - 12:00
Invited talk-01
Growth of AlPyN1-y on GaN by Metal-Organic Vapour Phase Epitaxy
Markus Pristovsek, Nagoya University
{x_abstract}
12:00 - 12:15
Oral presentation-02
Thermodynamic Analysis of Oxide Vapor Phase Epitaxy of GaN
Yuki Sakurai, Osaka University, et al.
{x_abstract}
12:15 - 12:30
Oral presentation-03
Origins of Epitaxial Surface Haze on GaN Substrates for kV Power Devices
Mark Goorsky, Materials Science and Engineering, University of California Los Angeles, USA
{x_abstract}
12:30 - 12:45
Oral presentation-04
Preliminary studies on halide vapor phase epitaxy of AlGaN alloy on GaN substrates
Tomasz Sochacki, Institute of High Pressure Physics Polish Academy of Sciences, et al.
{x_abstract}