09:45 - 11:00
Parallel sessions
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09:45 - 11:00
Semiconductors-03, SG-I-1
Room: {session_room}
Chair/s:
Jeffrey Derby
09:45 - 10:15
Invited talk-01
Computational Fluid Dynamics modeling of a Novel High-Pressure Spatial Chemical Vapor Deposition Reactor (HPS-CVD) Design for Growth of Indium-Containing Nitrides
Siddha Pimputkar, Department of Materials Science and Engineering, Center for Photonics and Nanoelectronics, Lehigh University, Bethlehem, PA 18015, USA
{x_abstract}
10:15 - 10:30
Oral presentation-02
Growth and thermal properties of InSe crystal by using the ground simulation apparatus of China space station
Min Jin, College of Materials, Shanghai Dianji University
{x_abstract}
10:30 - 10:45
Oral presentation-03
Suppression of Polycrystal Nucleation by Pre-Mixed Gas of Nitrogen and Methane in the Na-Flux Method
Kazuma Hamada, Graduate School of Engineering, Osaka University
{x_abstract}
10:45 - 11:00
Oral presentation-04
Cesium Lead Bromide Crystal Growth: An investigation guided by lessons learned from the family of heavy metal compounds for radiation detection
Gilad Orr, Ariel University
{x_abstract}
11:00 - 11:15
Oral presentation-05
[CANCELLED]  Growth of High Resistive Cd0.85Mn0.15Te Single Crystal Using Vertical Bridgman Method for Ambient Temperature Gamma-Ray Detectors
Manivel Rajan, Department of Physics, Sri Sivasubramaniya Nadar College of Engineering, Chennai, India
{x_abstract}