09:45 - 11:00
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09:45 - 11:00
Semiconductors-01, SG-I-1
Room: {session_room}
Chair/s:
Markus Pristovsek
09:45 - 10:15
Invited talk-01
A study of iron-doped SiGe growth for thermoelectric applications
Sheng-Min Hu, Department of Chemical Engineering, National Taiwan University
{x_abstract}
10:15 - 10:30
Oral presentation-02
Effect of oxygen concentration during growth on crystalline quality of β-Ga2O3 crystals grown by crucible free growth techniques
Isao Takahashi, C & A corporation | Tohoku university
{x_abstract}
10:30 - 10:45
Oral presentation-03
Crystal Growth and Planar Defects of β-Ga2O3 Single Crystal
Wenxiang Mu, Shandong University
{x_abstract}
10:45 - 11:00
Oral presentation-04
Investigation of factors influencing the zone refining process of very high-purity germanium
Pradeep Chandra Palleti, Leibniz-Institute for Crystal Growth (IKZ), Max-Born Str. 2, 12489 Berlin, Germany
{x_abstract}