09:45 - 11:00
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09:45 - 11:00
New methods and techniques for crystal growth-01, SG-I-2
Room: {session_room}
Chair/s:
Christo Guguschev, Jan Pejchal
09:45 - 10:15
Invited talk-01
Oxide Crystal growth from Cold Crucible; Ce doped Gd3(Al,Ga)5O12 and β-Ga2O3 as examples.
Akira Yoshikawa, Tohoku University | C&A corporation
{x_abstract}
10:15 - 10:30
Oral presentation-02
SiGe epitaxial growth via pulsed laser annealing of Al-Ge pastes on Si
Takeshi Sato, Nagoya University, et al.
{x_abstract}
10:30 - 10:45
Oral presentation-03
[CANCELLED] Ultrahigh-quality SiC single crystal grown by multi-step
Peng Gu, Meishan Boya Advanced Materials Co., Ltd. | School of Earth and Space Sciences, Peking University
{x_abstract}
10:45 - 11:00
Oral presentation-04
Seed-free solid-state growth, structure and electrical properties of bulk KNN-based crystals
Minhong Jiang, Guilin University of Electronic Technology
{x_abstract}