11:30 - 12:45
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11:30 - 12:45
Modelling and artificial intelligence of crystal growth processes-04, SG-T-1
Room: {session_room}
Chair/s:
Natasha Dropka, Toru Ujihara
11:30 - 12:00
Invited talk-01
Role of electronic degrees of freedom in adsorption and the dynamics of the growth of semiconductor crystals and layers
Stanislaw Krukowski, Institute of High Pressure Physics Polish Academy of Sciences
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12:00 - 12:15
Oral presentation-02
Modeling of Convective Transport in Crystallization of Gallium Nitride by Basic Ammonothermal Method
Marek Żak, Institute of High Pressure Physics Polish Academy of Sciences
{x_abstract}
12:15 - 12:30
Oral presentation-03
Lattice Boltzmann Model (LBM) inspired radiative heat transport modeling with applications to crystal growth
Simon Brandon, Department of Chemical Engineering, Technion
{x_abstract}
12:30 - 12:45
Oral presentation-04
Data-driven Cz-Si scale-up under conditions of partial similarity
Natasha Dropka, Leibniz-Institut für Kristallzüchtung (IKZ), Berlin, Germany
{x_abstract}