09:45 - 11:00
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09:45 - 11:00
Bulk crystal growth-04, SG-T-2
Room: {session_room}
Chair/s:
Ryan Morrow
09:45 - 10:15
Invited talk-01
Mg2Si crystal growth by the vertical Bridgman method: scale-up and optimization by modeling and growth experiments
Xin Liu, Nagoya University, et al.
{x_abstract}
10:15 - 10:30
Oral presentation-02
Dislocation Interaction with Faceted Groove at Grain Boundary in Multicrystalline Silicon
Fan Yang, Institute for Materials Research, Tohoku University
{x_abstract}
10:30 - 10:45
Oral presentation-03
On the origin of cracks in thick GaN crystals grown by HVPE
Gleb Lukin, Fraunhofer Institute for Integrated Systems and Device Technology IISB, et al.
{x_abstract}
10:45 - 11:00
Oral presentation-04
Stress analysis of multicrystalline Si with artificial grain boundaries to investigate the generation mechanism of dislocation clusters
Haruki Tajika, Graduate School of Engineering, Nagoya University, Japan, et al.
{x_abstract}