14:45 - 16:00
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14:45 - 16:00
Bulk crystal growth-03, SG-T-2
Room: {session_room}
Chair/s:
Hanna Dabkowska
14:45 - 15:15
Invited talk-01
Numerical analysis of heat and mass transfer of Ga2O3 grown by skull melting method
Koichi KAKIMOTO, NICHe, Tohoku Univ. JAPAN | C&A Co.2, JAPAN | RIAM, Kyushu Univ. JAPAN IMR, Tohoku Univ. JAPAN
{x_abstract}
15:15 - 15:30
Oral presentation-02
Analysis of the Engulfment of Argon Bubbles during Silicon Crystal Growth
Jeffrey Derby, University of Minnesota, et al.
{x_abstract}
15:30 - 15:45
Oral presentation-03
Growth dynamics of lattice dislocations and small-angle grain boundaries in multicrystalline silicon during directional solidification
Lu-Chung Chuang, Institute for Materials Research, Tohoku University, et al.
{x_abstract}
15:45 - 16:00
Oral presentation-04
Optimization of temperature distribution transition in Directional Solidification method without restriction of growth furnace structure
Kentaro Kutsukake, Nagoya University /Graduate School of Engineering
{x_abstract}