High-rate growth of pure β-Ga 2 O 3 thick layers on 2-inch-diameter substrates by hot-wall metalorganic vapor phase epitaxy

High-rate growth of pure β-Ga₂O₃ thick layers on 2-inch-diameter substrates by hot-wall metalorganic vapor phase epitaxy

Poster presentation-43

Presented by: Ken Goto

Ken Goto

Tokyo University of Agriculture and Technology